Study of the Output Electric Parameters of the Sub-cells Composing the Ga0.67In0.33P/GaAs/Ga0.70In0.30As Triple-Junction Photovoltaic Cell and its Performance in Real Environment:Cases of Bujumbura and Bugarama in Burundi

Multi-junction photovoltaic cells composed of III-V semiconductor materials are widely used in photovoltaic systems. They offer very high efficiencies compared to single-junction photovoltaic cells. Knowledge of the behavior of their electrical parameters in real operating conditions is essential for their best use. This work presents an analytical model for predicting the behavior of the output electrical parameters of the sub-cells composing the Ga0.67In0.33P/GaAs/Ga0.70In0.30As triple junction photovoltaic cell, operating under the actual conditions of two selected sites. The dependence of the external quantum efficiency at the wavelengths corresponding to the absorption ranges of the top (Ga0.67In0.33P), middle (GaAs) and bottom (Ga0.70In0.30As)$$ sub-cells is analyzed and discussed. The influence of temperature and irradiation on the V oc ,J sc, F F and η parameters is discussed taking into account the meteorological characteristics of two selected locations. An average daily conversion efficiency of the Triple-Junction solar cell of 37.24% and a daily electrical power of 1613.1 W/m2 for the typical day(TD) of the sunniest month of the Bujumbura site were found. Similarly, under the same conditions, for the Bugarama site, we found an average daily efficiency of 37.28% and a daily electrical power of 1619.7 W/m2. The developed model can also be used to design a more suitable Photovoltaic system at any specified place, provided that local weather data is available.